Authors:
T. Anand, S. Kevin Bennett, Yuri Ryagin, Pradeep Kamaraj
Addresses:
Department of Aeronautical Engineering, Sathyabama Institute of Science and Technology, Chennai, Tamil Nadu, India. Department of Low Temperature Physics and Nanoscale Systems, Ural Federal University (UrFU), Yekaterinburg, Sverdlovsk Oblast, Russia. Department of Petroleum Engineering, Dhaanish Ahmed College of Engineering, Chennai, Tamil Nadu, India.
Abstract:
This study provides a comprehensive investigation into the synthesis and characterization of Cu–Sb–chalcogenide thin films, namely Cu₃SbS₄, Cu₃SbSe₄, and CuSbTe₂. The materials were fabricated using a two-step process: deposition of metallic precursor layers, followed by controlled chalcogenation to form the desired compounds. Detailed structural, optical, and microstructural analyses were performed using grazing-incidence X-ray diffraction, Raman spectroscopy, UV–VIS–NIR spectroscopy, scanning and transmission electron microscopy, and spectroscopic ellipsometry. These techniques confirmed phase formation, crystallinity, and uniform film morphology. The laser-induced phase transition behavior of Cu₃SbS₄ and Cu₃SbSe₄ was systematically examined to assess their suitability for optical switching applications. Thin films were exposed to continuous-wave 532 nm laser irradiation at varying power levels, and structural changes were tracked through Raman spectroscopy. Complementary COMSOL Multiphysics simulations were conducted to estimate surface temperature distributions during laser exposure by solving the heat diffusion equation. Power-dependent and time-resolved Raman measurements on Cu₃SbS₄ enabled analysis of phase transformation kinetics. The activation energy of the laser-driven transition was determined using Arrhenius analysis of the temporal evolution of Raman features. Overall, the findings advance understanding of the photo-induced phase behavior of Cu–Sb–chalcogenides and highlight their potential for tunable optical and phase-change applications.
Keywords: Thin-Film Synthesis; Phase Transition; Synthesis and Characterization; Chalcogenation Process; Chalcogenide-Based Semiconductors; Renewable-Energy Technologies.
Received on: 06/08/2024, Revised on: 27/09/2024, Accepted on: 21/12/2024, Published on: 12/09/2025
DOI: 10.64091/ATIAS.2025.000243
AVE Trends in Intelligent Applied Sciences, 2025 Vol. 1 No. 3 , Pages: 136–143